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SI1470DH-T1-GE3 Picture

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SI1470DH-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 5.1A SC70-6
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
66mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta), 2.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6 (SOT-363)
Package / Case
6-TSSOP, SC-88, SOT-363
Other
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