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MOSFETs - Single
IRFH5406TRPBF Picture

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IRFH5406TRPBF

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In Stock:5,976(Ref. price)
Qty.Unit PriceExt. Price
1
$0.51480
$0.51480
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
14.4mOhm @ 24A, 10V
Vgs(th) (Max) @ Id
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1.256 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 46W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Other
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