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MOSFETs - Single
SI2393DS-T1-GE3 Picture

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SI2393DS-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 30V 6.1A/7.5A SOT23
  • Datasheet download
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In Stock:8,605(Ref. price)
Qty.Unit PriceExt. Price
1
$0.50350
$0.50350
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22.7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 10 V
Vgs (Max)
+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
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