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Transistors - IGBTs - Single
STGWA40N120KD Picture

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STGWA40N120KD

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In Stock:18,504(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
PowerMESH™
Package
Tube
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
3.85V @ 15V, 30A
Power - Max
240 W
Switching Energy
3.7mJ (on), 5.7mJ (off)
Input Type
Standard
Gate Charge
126 nC
Td (on/off) @ 25°C
48ns/338ns
Test Condition
960V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)
84 ns
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Other
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IC: STM, NXP, Infineon, ADi, Microchip, Atmel, FTDI, TJX
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MLCC: MURATA, SAMSUNG, YAGEO, TAIYO, TDK, JOHNASON  
TANT CAP: VISHAY, KEMET, AVX, EPCOS, ROHM,
ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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