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Transistors - IGBTs - Single
HGT1S2N120CN Picture

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HGT1S2N120CN

  • ON Semiconductor
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  • IGBT 1200V 13A 104W I2PAK
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
13 A
Current - Collector Pulsed (Icm)
20 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2.6A
Power - Max
104 W
Switching Energy
96µJ (on), 355µJ (off)
Input Type
Standard
Gate Charge
30 nC
Td (on/off) @ 25°C
25ns/205ns
Test Condition
960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package
TO-262
Other
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