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MOSFETs - Single
IPP65R110CFD7XKSA1 Picture

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IPP65R110CFD7XKSA1

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In Stock:1,138(Ref. price)
Qty.Unit PriceExt. Price
1
$4.58880
$4.58880
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ CFD7
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 480µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1942 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Other
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