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SI3499DV-T1-E3 Picture

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SI3499DV-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 8V 5.3A 6TSOP
  • Datasheet download
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In Stock:20,708(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id
750mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 4.5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Other
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