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MOSFETs - Single
APT29F100B2 Picture

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APT29F100B2

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In Stock:2,931(Ref. price)
Qty.Unit PriceExt. Price
1
$14.65200
$14.65200
Documents
Specifications
DescriptionDetails
Series
POWER MOS 8™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
440mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
8500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1040W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
T-MAX™ [B2]
Package / Case
TO-247-3 Variant
Other
ALLYE TRADING franchised of  SAMXON/ ROYALOHM, strong at active & passive items: MLCC, TANT CAP, ECAP, Resistor, Inductor, crystal, filter for brands:

IC: STM, NXP, Infineon, ADi, Microchip, Atmel, FTDI, TJX
DC/DC converter : MURATA, AIMTEC, RECOM, PEAK, MORSUN, MEANWELL
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TANT CAP: VISHAY, KEMET, AVX, EPCOS, ROHM,
ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

Opto/IR receiverCREE, OSRAM,  EVERLIGHT,  LITEON, VISHAY, HONEYWELL, AVAGO, KODENSHI.


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