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MOSFETs - Single
SIHA6N80E-GE3 Picture

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SIHA6N80E-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 800V 5.4A TO220
  • Datasheet download
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In Stock:2,811(Ref. price)
Qty.Unit PriceExt. Price
1
$2.60370
$2.60370
Documents
Specifications
DescriptionDetails
Series
E
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
827 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Other
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