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MOSFETs - Single
IXTT2N300P3HV Picture

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IXTT2N300P3HV

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  • MOSFET N-CH 3000V 2A TO268
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In Stock:18,116(Ref. price)
Qty.Unit PriceExt. Price
1
$38.06650
$38.06650
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
3000 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
21Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1890 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 155°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Other
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