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MOSFETs - Single
NX2301P,215 Picture

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NX2301P,215

  • NXP Semiconductors
  • New
  • 20 V, 2 A P-CHANNEL TRENCH MOSFE
  • Datasheet download
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In Stock:17,216(Ref. price)
Qty.Unit PriceExt. Price
1
$0.03880
$0.03880
Documents
Specifications
DescriptionDetails
Series
Automotive, AEC-Q101, TrenchMOS™
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
400mW (Ta), 2.8W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
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