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MOSFETs - Single
SIHB24N65EF-GE3 Picture

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SIHB24N65EF-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 650V 24A D2PAK
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In Stock:4,968(Ref. price)
Qty.Unit PriceExt. Price
1
$6.04800
$6.04800
Documents
Specifications
DescriptionDetails
Series
E
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2774 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
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