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MOSFETs - Single
IRLU3103PBF Picture

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IRLU3103PBF

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In Stock:20,280(Ref. price)
Qty.Unit PriceExt. Price
1
$0.46550
$0.46550
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
19mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
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Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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