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MOSFETs - Single
IXFV12N120P Picture

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IXFV12N120P

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  • MOSFET N-CH 1200V 12A PLUS220
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In Stock:20,078(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HiPerFET™, PolarP2™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
103 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
5400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
543W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS220
Package / Case
TO-220-3, Short Tab
Other
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