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MOSFETs - Single
BUK652R3-40C,127 Picture

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BUK652R3-40C,127

  • NXP USA Inc.
  • New
  • MOSFET N-CH 40V 120A TO220AB
  • Datasheet download
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Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
15100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
306W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
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