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SI3430DV-T1-GE3 Picture

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SI3430DV-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 100V 1.8A 6TSOP
  • Datasheet download
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In Stock:4,873(Ref. price)
Qty.Unit PriceExt. Price
1
$1.14660
$1.14660
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.14W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Other
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