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MOSFETs - Single
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EPC2018

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  • GANFET N-CH 150V 12A DIE
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Documents
Specifications
DescriptionDetails
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
25mOhm @ 6A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 5 V
Vgs (Max)
+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds
540 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Other
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