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SIDR402DP-T1-GE3 Picture

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SIDR402DP-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 40V 64.6A/100A PPAK
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In Stock:18,352(Ref. price)
Qty.Unit PriceExt. Price
1
$1.17349
$1.17349
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
64.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9100 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Other
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