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MOSFETs - Single
BSS225H6327XTSA1 Picture

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BSS225H6327XTSA1

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In Stock:17,594(Ref. price)
Qty.Unit PriceExt. Price
1
$0.18205
$0.18205
Documents
Specifications
DescriptionDetails
Series
SIPMOS™
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
131 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT89
Package / Case
TO-243AA
Other
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ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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