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SISS70DN-T1-GE3 Picture

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SISS70DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 125V 8.5A/31A PPAK
  • Datasheet download
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In Stock:5,825(Ref. price)
Qty.Unit PriceExt. Price
1
$1.37740
$1.37740
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
125 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 62.5 V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S (3.3x3.3)
Package / Case
PowerPAK® 1212-8S
Other
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