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MOSFETs - Single
BUZ31HXKSA1 Picture

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BUZ31HXKSA1

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In Stock:6,604(Ref. price)
Qty.Unit PriceExt. Price
1
$0.65660
$0.65660
Documents
Specifications
DescriptionDetails
Series
SIPMOS®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1.12 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
95W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Other
Allok electronics franchised of  SAMXON/ ROYALOHM, strong at active & passive items: MLCC, TANT CAP, ECAP, Resistor, Inductor, crystal, filter for brands:

IC: STM, NXP, Infineon, ADi, Microchip, Atmel, FTDI, TJX
DC/DC converter : MURATA, AIMTEC, RECOM, PEAK, MORSUN, MEANWELL
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TANT CAP: VISHAY, KEMET, AVX, EPCOS, ROHM,
ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

Opto/IR receiverCREE, OSRAM,  EVERLIGHT,  LITEON, VISHAY, HONEYWELL, AVAGO, KODENSHI.


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