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MOSFETs - Single
SIHP12N60E-GE3 Picture

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SIHP12N60E-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 600V 12A TO220AB
  • Datasheet download
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In Stock:222(Ref. price)
Qty.Unit PriceExt. Price
1
$2.70720
$2.70720
Documents
Specifications
DescriptionDetails
Series
E
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
937 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
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