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MOSFETs - Single
IXFN60N60 Picture

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IXFN60N60

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  • MOSFET N-CH 600V 60A SOT-227B
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Documents
Specifications
DescriptionDetails
Series
HiPerFET™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
75mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
700W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Other
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