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MOSFETs - Single
C2M0280120D Picture

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C2M0280120D

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  • SICFET N-CH 1200V 10A TO247-3
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In Stock:18,066(Ref. price)
Qty.Unit PriceExt. Price
1
$4.88640
$4.88640
Documents
Specifications
DescriptionDetails
Series
Z-FET™
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
20.4 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
259 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Other
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