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MOSFETs - Single
C3M0075120K Picture

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C3M0075120K

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  • SICFET N-CH 1200V 30A TO247-4L
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In Stock:20,642(Ref. price)
Qty.Unit PriceExt. Price
1
$10.23350
$10.23350
Documents
Specifications
DescriptionDetails
Series
C3M™
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
113.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Other
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