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MOSFETs - Single
SISS73DN-T1-GE3 Picture

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SISS73DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 150V 4.4A/16.2A PPAK
  • Datasheet download
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In Stock:4,690(Ref. price)
Qty.Unit PriceExt. Price
1
$1.50100
$1.50100
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
4.4A (Ta), 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
719 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
5.1W (Ta), 65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8S
Package / Case
PowerPAK® 1212-8S
Other
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