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MOSFETs - Single
IRF7401PBF Picture

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IRF7401PBF

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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
22mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Allok electronics franchised of  SAMXON/ ROYALOHM, strong at active & passive items: MLCC, TANT CAP, ECAP, Resistor, Inductor, crystal, filter for brands:

IC: STM, NXP, Infineon, ADi, Microchip, Atmel, FTDI, TJX
DC/DC converter : MURATA, AIMTEC, RECOM, PEAK, MORSUN, MEANWELL
MLCC: MURATA, SAMSUNG, YAGEO, TAIYO, TDK, JOHNASON  
TANT CAP: VISHAY, KEMET, AVX, EPCOS, ROHM,
ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

Opto/IR receiverCREE, OSRAM,  EVERLIGHT,  LITEON, VISHAY, HONEYWELL, AVAGO, KODENSHI.


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