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MOSFETs - Single
LSIC1MO120E0080 Picture

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LSIC1MO120E0080

  • Littelfuse Inc.
  • New
  • SICFET N-CH 1200V 39A TO247-3
  • Datasheet download
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In Stock:3,062(Ref. price)
Qty.Unit PriceExt. Price
1
$17.38500
$17.38500
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 20 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
1825 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Other
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