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MOSFETs - Single
PSMN8R0-30YL,115 Picture

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PSMN8R0-30YL,115

  • NXP USA Inc.
  • New
  • MOSFET N-CH 30V 62A LFPAK56
  • Datasheet download
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In Stock:7,694(Ref. price)
Qty.Unit PriceExt. Price
1
$0.16660
$0.16660
Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
18.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1.005 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
56W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Other
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