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MOSFETs - Single
HUFA75321D3 Picture

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HUFA75321D3

  • ON Semiconductor
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  • MOSFET N-CH 55V 20A IPAK
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Documents
Specifications
DescriptionDetails
Series
UltraFET™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
93W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
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