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MOSFETs - Single
RM5N650IP Picture

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RM5N650IP

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In Stock:19,358(Ref. price)
Qty.Unit PriceExt. Price
1
$0.44100
$0.44100
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
49W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Stub Leads, IPak
Other
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