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MOSFETs - Single
BSH111,215 Picture

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BSH111,215

  • NXP USA Inc.
  • New
  • MOSFET N-CH 55V 335MA TO236AB
  • Datasheet download
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In Stock:406,031(Ref. price)
Qty.Unit PriceExt. Price
1
$0.04750
$0.04750
Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 8 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
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