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SI7720DN-T1-GE3 Picture

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SI7720DN-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 12A PPAK1212-8
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In Stock:17,008(Ref. price)
Qty.Unit PriceExt. Price
1
$0.91200
$0.91200
Documents
Specifications
DescriptionDetails
Series
SkyFET®, TrenchFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1790 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Other
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