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SI8429DB-T1-E1 Picture

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SI8429DB-T1-E1

  • Vishay Siliconix
  • New
  • MOSFET P-CH 8V 11.7A 4MICROFOOT
  • Datasheet download
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In Stock:14,590(Ref. price)
Qty.Unit PriceExt. Price
1
$1.07910
$1.07910
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
11.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
35mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
2.77W (Ta), 6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA, CSPBGA
Other
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