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MOSFETs - Single
NTHS2101PT1G Picture

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NTHS2101PT1G

  • ON Semiconductor
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  • MOSFET P-CH 8V 5.4A CHIPFET
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In Stock:19,440(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 6.4 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
ChipFET™
Package / Case
8-SMD, Flat Lead
Other
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