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MOSFETs - Single
TPC8113(TE12L,Q) Picture

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TPC8113(TE12L,Q)

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In Stock:17,678(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP (5.5x6.0)
Package / Case
8-SOIC (0.173", 4.40mm Width)
Other
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ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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