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MOSFETs - Single
SI8810EDB-T2-E1 Picture

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SI8810EDB-T2-E1

  • Vishay Siliconix
  • New
  • MOSFET N-CH 20V 2.1A MICROFOOT
  • Datasheet download
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In Stock:20,426(Ref. price)
Qty.Unit PriceExt. Price
1
$0.48960
$0.48960
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
72mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
245 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA
Other
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