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MOSFETs - Single
SI4862DY-T1-GE3 Picture

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SI4862DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 16V 17A 8SO
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
16 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
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