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SIA415DJ-T1-GE3 Picture

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SIA415DJ-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET P-CH 20V 12A PPAK SC70-6
  • Datasheet download
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In Stock:1,951(Ref. price)
Qty.Unit PriceExt. Price
1
$0.67320
$0.67320
Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
35mOhm @ 5.6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6 Single
Package / Case
PowerPAK® SC-70-6
Other
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