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MOSFETs - Single
IXTY02N50D Picture

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IXTY02N50D

  • IXYS
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  • MOSFET N-CH 500V 200MA TO252
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In Stock:17,580(Ref. price)
Qty.Unit PriceExt. Price
1
$1.58443
$1.58443
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
30Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
1.1W (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
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