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MOSFETs - Single
SIR826BDP-T1-RE3 Picture

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SIR826BDP-T1-RE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 80V 19.8A/80.8A PPAK
  • Datasheet download
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In Stock:7,675(Ref. price)
Qty.Unit PriceExt. Price
1
$1.72260
$1.72260
Documents
Specifications
DescriptionDetails
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
19.8A (Ta), 80.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
5.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3030 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Other
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