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MOSFETs - Single
FDG312P Picture

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FDG312P

  • ON Semiconductor
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  • MOSFET P-CH 20V 1.2A SC88
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In Stock:17,172(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-88 (SC-70-6)
Package / Case
6-TSSOP, SC-88, SOT-363
Other
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