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MOSFETs - Single
IRFL014NPBF Picture

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IRFL014NPBF

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In Stock:7,900(Ref. price)
Qty.Unit PriceExt. Price
1
$0.18620
$0.18620
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Other
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Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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