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MOSFETs - Single
PHK28NQ03LT,518 Picture

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PHK28NQ03LT,518

  • NXP USA Inc.
  • New
  • MOSFET N-CH 30V 23.7A 8SO
  • Datasheet download
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In Stock:19,498(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchMOS™
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
23.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
30.3 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
6.25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
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