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MOSFETs - Arrays
SI4972DY-T1-E3 Picture

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SI4972DY-T1-E3

  • Vishay Siliconix
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  • MOSFET 2N-CH 30V 10.8A 8SOIC
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In Stock:18,996(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10.8A, 7.2A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1080pF @ 15V
Power - Max
3.1W, 2.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Other
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