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MOSFETs - Arrays
SI5915BDC-T1-GE3 Picture

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SI5915BDC-T1-GE3

  • Vishay Siliconix
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  • MOSFET 2P-CH 8V 4A 1206-8
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In Stock:17,484(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
70mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
420pF @ 4V
Power - Max
3.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Other
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TANT CAP: VISHAY, KEMET, AVX, EPCOS, ROHM,
ECAP: RUBYCON, SAMWHA, NICHICON, NIPPON, KAMCAP, CAPXON, JAMICON
Inductor/Filter/Beads: Murata, TAIYO, SUNLORD, FengHua

Crystal: EPSON, SEIKO, NDK KDS, HOSONIC, TXC

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