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MOSFETs - Arrays
TPD3215M Picture

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TPD3215M

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  • GANFET 2N-CH 600V 70A MODULE
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In Stock:161(Ref. price)
Qty.Unit PriceExt. Price
1
$168.12480
$168.12480
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Power - Max
470W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
Module
Other
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