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MOSFETs - Arrays
SIZ900DT-T1-GE3 Picture

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SIZ900DT-T1-GE3

  • Vishay Siliconix
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  • MOSFET 2N-CH 30V 24A POWERPAIR
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
24A, 28A
Rds On (Max) @ Id, Vgs
7.2mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1830pF @ 15V
Power - Max
48W, 100W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-PowerPair™
Supplier Device Package
6-PowerPair™
Other
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