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MOSFETs - Arrays
SI4388DY-T1-E3 Picture

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SI4388DY-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET 2N-CH 30V 10.7A 8-SOIC
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Half Bridge)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10.7A, 11.3A
Rds On (Max) @ Id, Vgs
16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
946pF @ 15V
Power - Max
3.3W, 3.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Other
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