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MOSFETs - Arrays
SI1958DH-T1-E3 Picture

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SI1958DH-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET 2N-CH 20V 1.3A SC70-6
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In Stock:19,006(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.3A
Rds On (Max) @ Id, Vgs
205mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id
1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
105pF @ 10V
Power - Max
1.25W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6 (SOT-363)
Other
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